26-236 QUANTA CMOS IMAGE SENSOR FOR LOW LIGHT LEVEL IN SPACE ENVIRONMENTS

  • Ph.D., 36 months
  • Full-time
  • Experience: no preference
  • MBA
  • Electronic components

Mission

Low light level detection down to the unique photon is the ultimate challenge to reach for many space applications (e.g. Astronomy, Earth-Observation by night, Detection and Ranging…) and non-space applications: night vision (for defense and commercial applications) , microscopy, life science, medical imaging… Traditional technologies used amplified detectors either photocathodes based devices (Image intensifier tubes, ICMOS, EBCMOS), or solid-state devices (SPADs, EMCCD), which are usually operating at high voltages. Moreover, except EMCDD detectors, photocathodes material and SPADs suffer from lower quantum efficiency (QE). The solid-state detectors approach then remains the main target due to their high QE potentiality. Nowadays Quanta Image Sensor (QIS) have been identified as the disruptive technology combining all advantages: small pixels with high fill factor, low voltage operation, accurate photon level detection and counting thanks to its high Charge-to-Voltage conversion Factor (CVF) and low noise readout chain

After a first thesis which end up with some QIS pixels design and manufactured tests vehicles, the first goal of this second thesis will be to characterize them in-depth and envisage tests under irradiations level representative to space environments if the pixel design is relevant. Based on the output of this study, a hardened design compatible space environment of a QIS sensor including a low noise readout chain up to column level will be investigated. If another a CMOS Silicon Foundry run is available, new tests vehicles will be manufactured and their performance assessed.

In detail, the doctoral student will:

Update the literature of QIS or qCMOS and new radiations studies

Conduct radiation test campaigns on the existing test vehicles

Propose innovative architecture to design a sensor exhibiting high CVF, high sensitivity and low noise readout chain pixels, based on irradiations results outputs, and TCAD modeling

Design new test vehicles and characterize them if CMOS Silicon Foundry run available

Synthesize the work developed during the thesis and present the results in international conferences and peer reviewed scientific journals

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For more Information about the topics and the co-financial partner (found by the lab!); contact Directeur de thèse -vincent.goiffon@isae-supaero.fr

Then, prepare a resume, a recent transcript and a reference letter from your M2 supervisor/ engineering school director and you will be ready to apply online before March 13th, 2026 Midnight Paris time!

Profile

Master Degree or equivalent (e.g. French Engineering School Degree) specialized in nano/microelectronics (design, process, ...) / optoelectronics / imaging electronics, sensors, detectors / semiconductor physics / solid-state physics / analog and digital electronics.

Laboratoire

ISAE

Message from PhD team

More details on CNES website : https://cnes.fr/fr/theses-post-doctorats