This internship will mainly focus on the physical simulation of power structures that use wide‑bandgap semiconductors (SiC: silicon carbide and GaN: gallium nitride).

CNES has the ECORCE software, developed by the company Delphea, which allows the simulation of the interaction of various types of radiation with a semiconductor.

The first part of the internship will consist of learning to use the ECORCE software in order to model simple radiation‑semiconductor interaction phenomena.

The second part will involve simulating a SiC Schottky diode to verify the software’s capability to reproduce behaviours observed under heavy‑ion beam irradiation. Several modelling approaches will be carried out (2‑D planar, 2‑D axisymmetric, with and without top‑metal, …) and compared. Afterwards an assessment will be made of the influence of certain key technological parameters on the diode’s response when a heavy ion passes through it.

The third part will consist of modelling a high‑power GaN component that uses HD‑GIT technology. For this, the intern will be provided with a cross‑section of the structure, theses and scientific publications describing this type of structure. The intern will have to build the component model step‑by‑step using these documents. The main objective of this third part is to successfully simulate a power GaN‑FET in both its on‑state and off‑state. A secondary objective is to simulate the interaction of a heavy ion with this structure.

A solid knowledge of semiconductor physics is expected. An awareness of radiation‑matter interaction is desirable. No prior knowledge of finite‑element modelling is expected.